sep.2000 k f e 1. 2. 3. 4. 5. 1. 2. 3. 4. 5. snr vnc fno vn1 cn1 vp1 spr cp1 vpc fpo n side p side l p 0.64 mm sq. pin (10 typ.) m d h g g b a n j c n s (8 typ.) c2e1 e2 c1 2 1 345 t - dia. (2 typ.) q - dia. (2 typ.) r - thd. (3 typ.) p 2 1345 sink sens out2 out1 gnd temp vcc fo sr in vn1 fno snr cn1 vnc c2e1 e2 sink sens out2 out1 gnd temp vcc fo sr in c1 vp1 fpo spr cp1 vpc description: mitsubishi intelligent power mod- ules are isolated base modules de- signed for power switching applica- tions operating at frequencies to 20khz. built-in control circuits pro- vide optimum gate drive and pro- tection for the igbt and free wheel diode power devices. features: u complete output power circuit u gate drive circuit u protection logic C short circuit C over current C over temperature C under voltage applications: u inverters u ups u motion/servo control u power supplies ordering information: example: select the complete part number from the table below -i.e. PM150DSA120 is a 1200v, 150 ampere intelligent power mod- ule. type current rating v ces amperes volts (x 10) pm 150 120 dimensions inches millimeters a 4.33 110.0 b 3.66 0.010 93.0 0.25 c 2.20 56.0 d 2.01 51.0 e 1.14 +0.04/-0.02 29.0 +1/-0.5 f 1.02 26.0 g 0.98 25.0 h 0.90 23.0 j 0.85 21.5 dimensions inches millimeters k 0.55 14.0 l 0.51 13.0 m 0.47 12.0 n 0.33 8.5 p 0.28 7.0 q 0.22 dia. dia. 5.5 r m5 metric m5 s 0.100 2.54 t 0.08 dia. dia. 2.0 outline drawing and circuit diagram mitsubishi intelligent power modules PM150DSA120 flat-base type insulated package
sep.2000 absolute maximum ratings, t j = 25 c unless otherwise specified symbol ratings units power device junction temperature t j -20 to 150 c storage temperature t stg -40 to 125 c case operating temperature t c -20 to 100 c mounting torque, m5 mounting screws 2.5~3.5 n m mounting torque, m5 main terminal screws 2.5~3.5 n m module weight (typical) 430 grams supply voltage protected by oc and sc (v d = 13.5 - 16.5v, inverter part) v cc(prot.) 800 volts isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 vrms control sector supply voltage (applied between v p1 -v pc , v n1 -v nc )v d 20 volts input voltage (applied between c p1 -v pc , c n1 -v nc )v cin 10 volts fault output supply voltage (applied between f po -v pc and f no -v nc )v fo 20 volts fault output current (sink current at f po , f no terminal) i fo 20 ma igbt inverter sector collector-emitter voltage (v d = 15v, v cin = 5v) v ces 1200 volts collector current, (t c = 25 c) i c 150 amperes peak collector current, (t c = 25 c) i cp 300 amperes supply voltage (applied between c1 - e2) v cc 900 volts supply voltage, surge (applied between c1 - e2) v cc(surge) 1000 volts collector dissipation p c 960 watts mitsubishi intelligent power modules PM150DSA120 flat-base type insulated package
sep.2000 electrical and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units control sector over current trip level inverter part oc -20 c t 125 c, v d = 15v 200 320 amperes short circuit trip level inverter part sc -20 c t 125 c, v d = 15v 280 450 amperes over current delay time t off(oc) v d = 15v 5 m s over temperature protection ot trip level 100 110 120 c ot r reset level 85 95 105 c supply circuit under voltage protection uv trip level 11.5 12.0 12.5 volts uv r reset level 12.5 volts supply voltage v d applied between v p1 -v pc , v n1 -v nc 13.5 15 16.5 volts circuit current i d v d = 15v, v cin = 5v, v n1 -v nc 1926ma v d = 15v, v cin = 5v, v xp1 -v xpc 1926ma input on threshold voltage v cin(on) applied between 1.2 1.5 1.8 volts input off threshold voltage v cin(off) c p1 -v pc , c n1 -v nc 1.7 2.0 2.3 volts pwm input frequency f pwm 3- f sinusoidal 15 20 khz fault output current i fo(h) v d = 15v, v fo = 15v 0.01 ma i fo(l) v d = 15v, v fo = 15v 10 15 ma minimum fault output pulse width t fo v d = 15v 1.0 1.8 ms sxr terminal output voltage v sxr -20 c t j 125 c, rin = 6.8 k w (s pr , s nr ) 4.5 5.1 5.6 volts mitsubishi intelligent power modules PM150DSA120 flat-base type insulated package
sep.2000 electrical and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units igbt inverter sector collector cutoff current i ces v ce = v ces , t j = 25 c1ma v ce = v ces , t j = 125 c10ma emitter-collector voltage v ec -i c = 150a, v d = 15v, v cin = 5v 2.5 3.5 volts collector-emitter saturation voltage v ce(sat) v d = 15v, v cin = 0v, i c = 150a 2.3 3.2 volts v d = 15v, v cin = 0v, i c = 150a, 2.1 2.9 volts t j = 125 c inductive load switching times t on 0.5 1.4 2.5 m s t rr v d = 15v, v cin = 0 ? 5v 0.2 0.4 m s t c(on) v cc = 600v, i c = 150a 0.4 1.0 m s t off t j = 125 c 2.5 3.5 m s t c(off) 0.6 1.1 m s thermal characteristics characteristic symbol condition min. typ. max. units junction to case thermal resistance r th(j-c)q each igbt 0.13 c/watt r th(j-c)f each fwdi 0.25 c/watt contact thermal resistance r th(c-f) case to fin per module 0.048 c/watt thermal grease applied recommended conditions for use characteristic symbol condition value units supply voltage v cc applied across c1-e2 terminals 0 ~ 800 volts v d applied between v p1 -v pc , v n1 -v nc 15 1.5 volts input on voltage v cin(on) applied between 0 ~ 0.8 volts input off voltage v cin(off) c p1 -v pc , c n1 -v nc 4.0 ~ v sxr volts pwm input frequency f pwm using application circuit 5 ~ 20 khz minimum dead time t dead input signal 3 3.5 m s mitsubishi intelligent power modules PM150DSA120 flat-base type insulated package
sep.2000 mitsubishi intelligent power modules PM150DSA120 flat-base type insulated package 0 1 2 3 4 5 saturation voltage characteristics (typical) collector current, i c , (amperes) saturation voltage v ce(sat) , (volts) 00 40 240 80 120 200 v d = 15v v cin = 0v t j = 25 o c t j = 125 o c 160 0 1 2 3 4 5 collector-emitter saturation voltage characteristics (typical) supply voltage, v d , (volts) collector-emitter saturation voltage v ce(sat) , (volts) 12 14 16 18 20 i c = 150a v cin = 0v t j = 25 o c t j = 125 o c 6 012 0 40 output characteristics (typical) collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) 35 80 120 160 200 240 4 t j = 25 o c v cin = 0v v d = 17v 13 15 10 1 10 2 10 3 10 -1 collector current, i c , (amperes) switching times, t on , t off , ( m s) switching time vs. collector current (typical) t on 10 0 10 1 t off v cc = 600v v d = 15v inductive load t j = 25 o c t j = 125 o c 10 1 10 2 10 3 10 -1 collector current, i c , (amperes) switching times, t c(on) , t c(off) , ( m s) switching time vs. collector current (typical) t c(on) 10 0 10 1 t c(off) v cc = 600v v d = 15v inductive load t j = 25 o c t j = 125 o c 10 1 10 2 10 3 10 -2 collector reverse current, -i c , (amperes) reverse recovery time, t rr , ( m s) reverse recovery current vs. collector current (typical) 10 -1 10 0 v cc = 600v v d = 15v inductive load t j = 25 o c t j = 125 o c 10 1 reverse recovery current, i rr , (amperes) 10 2 10 3 t rr i rr 00 1.0 2.5 10 0 emitter-collector voltage, v ec , (volts) collector reverse current, -i c , (amperes) diode forward characteristics 10 1 10 3 0.5 1.5 2.0 t j = 25 o c t j = 125 o c v cin = 5v 10 2 3.0 3.5 40 60 80 100 120 over current trip level vs. supply voltage (typical) supply voltage, v d , (volts) over current trip level % (normalized) 12 14 16 18 20 0 t c = 25 o c 60 80 100 120 140 over current trip level vs. temperature (typical) junction temperature, t c , ( o c) over current trip level % (normalized) 0 40 80 120 v d = 15v 0 160
sep.2000 mitsubishi intelligent power modules PM150DSA120 flat-base type insulated package time, (s) transient impedance, z th(j-c) , (normalized value) transient thermal impedance characteristics (each fwdi) 10 1 10 -1 10 0 10 1 10 0 10 -1 10 -2 10 -3 single pulse standard value = r th(j-c)f = 0.25 o c/w 10 -2 10 -3 0 40 60 80 100 120 fault output pulse width vs. temperature (typical) junction temperature, t c , ( o c) fault output pulse width % (normalized) 0 40 80 120 v d = 15v 160 10 11 12 13 14 control supply voltage trip-reset level temperature dependency (typical) junction temperature, t c , ( o c) uv trip-reset level, uv, uv r , (volts) 160 040 80 uv r uv 0 120 time, (s) transient impedance, z th(j-c) , (normalized value) transient thermal impedance characteristics (each igbt) 10 1 10 -1 10 0 10 1 10 0 10 -1 10 -2 10 -3 single pulse standard value = r th(j-c)q = 0.13 o c/w 10 -2 10 -3
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